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We prepare quasi-1D films of Sb2Se3 on GaAs by molecular beam epitaxy. The aligned grains and anisotropic bonding hierarchy of the Sb2Se3 unit cell together produce giant birefringence in the near-infrared. 

We present the results of direct measurements of the effect of mechanically applied biaxial strain on Auger recombination rates in InGaAs quantum wells grown on InP. By mounting these structures on a flexible membrane, we applied strain mechanically rather than by changing the quantum well alloy fraction. Specifically, we employed time-resolved photoluminescence spectroscopy to probe the recombination dynamics in the degenerate carrier regime. From these measurements, we extract the non-degenerate cubic Auger coefficient C30. We found that applying 1.59% tensile biaxial strain increased the Auger C30 coefficient by 325% in one of our samples. These results support the hypothesis that the mechanical strain induced by heteroepitaxy plays a direct role in mitigating Auger recombination in InP-based telecommunication-range lasers. 

Optically resonant particles are key building blocks of many nanophotonic devices such as optical antennas and metasurfaces. Because the functionalities of such devices are largely determined by the optical properties of individual resonators, extending the attainable responses from a given particle is highly desirable. Practically, this is usually achieved by introducing an asymmetric dielectric environment. However, commonly used simple substrates have limited influences on the optical properties of the particles atop. Here, we show that the multipolar scattering of silicon microspheres can be effectively modified by placing the particles on a dielectric-covered mirror, which tunes the coupling between the Mie resonances of microspheres and the standing waves and waveguide modes in the dielectric spacer. This tunability allows selective excitation, enhancement, suppression, and even elimination of the multipolar resonances and enables scattering at extended wavelengths, providing transformative opportunities in controlling light–matter interactions for various applications. We further demonstrate with experiments the detection of molecular fingerprints by single-particle mid-infrared spectroscopy and with simulations strong optical repulsive forces that could elevate the particles from a substrate. 

We characterized the impact of mechanically-applied biaxial strain on Auger recombination in InGaAs quantum wells using time-resolved photoluminescence. Our results support that Auger recombination is reduced by mechanical distortion introduced by strained-layer epitaxy. 

Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for the plasmonic enhancement of mid-infrared devices. However, while typical plasmonic materials can be patterned to engineer strong localized resonances, the lack of lateral control in conventional MBE growth makes it challenging to create similar structures compatible with monolithically grown plasmonic InAs. To this end, we report the growth of highly doped InAs plasmonic ridges for the localized resonant enhancement of mid-IR emitters and absorbers. Furthermore, we demonstrate a method for regaining a planar surface above plasmonic corrugations, creating a pathway to epitaxially integrate these structures into active devices that leverage conventional growth and fabrication techniques.